SI2319DS-T1-GE3 detailed parameter description:.
- Polarity: P-channel.
- Rated voltage: -30V.
- Rated current: -5.6A.
- On-resistance: 47mΩ @ 10V, 56mΩ @ 4.5V.
- Gate-source voltage: 20Vgs (±V).
- Threshold voltage: -1Vth (V).
- Package type: SOT23.
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Application introduction:.
SI2319DS-T1-GE3 is a P-channel MOSFET suitable for various power management and power amplifier applications. It has negative rated voltage and rated current characteristics, which can provide reliable and efficient current switching function. .
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By controlling the gate-source voltage of 20Vgs (±V), the switch tube can be turned on and off to achieve current control and switch state conversion. Its lower on-resistance can reduce power consumption and improve system efficiency. .
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SI2319DS-T1-GE3 adopts SOT23 package and is suitable for use in various circuit boards and modules. .
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This device is widely used in power switches, power inverters, motor drivers and other fields. Due to its negative rated voltage and rated current characteristics, SI2319DS-T1-GE3 is particularly suitable for circuit applications that require control and switching of negative voltages. In these fields, it can provide reliable power switch control and current transmission of negative voltages. .
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In short, SI2319DS-T1-GE3 is a P-channel MOSFET suitable for application modules such as power management and power amplifiers. It is particularly suitable for fields that require control and switching of negative voltages, such as power switches, motor drivers and other fields.