SI2319CDS-T1-GE3 (VB2355) parameter description: P channel, -30V, -5.6A, on-resistance 47mΩ@10V, 56mΩ@4.5V, gate-source voltage range 20V (±V), threshold voltage -1V, package: SOT23. . Application introduction: SI2319CDS-T1-GE3 is suitable for P-channel MOSFET for power switching and voltage regulation applications. . Its low on-resistance helps reduce power loss and improve efficiency. . Advantages and applicable fields: With low on-resistance, it is suitable for fields requiring low power loss and high efficiency, such as power switching, voltage regulation and inverter modules. .
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