Product video

Your present location > Home page > Product video
SI2318DS-T1-GE3-VB, a N-channel SOT23-3 MOSFET datasheet parameters video explan
Datasheet下载
立即下载
Model: SI2318DS-T1-GE3 .
Silk screen: VB1330 .
Brand: VBsemi .
Parameters: .
- Channel type: N channel.
- Rated voltage: 30V .
- Rated current: 6.5A .
- RDS(ON): 30mΩ @ 10V, 33mΩ @ 4.5V .
- Gate-source voltage range: ±20V .
- Gate-source threshold voltage range: 1.2V ~2.2V .
- Package type: SOT23.
.
Application introduction: .
SI2318DS-T1-GE3 (silk screen: VB1330) is an N-channel power MOSFET produced by VBsemi Company. The following is a detailed parameter description and application introduction: .
.
Detailed parameter description: .
SI2318DS-T1-GE3 is an N-channel power MOSFET suitable for high voltage and high current applications. Its main parameters include rated voltage of 30V, rated current of 6.5A, RDS(ON) of 30mΩ @ 10V, 33mΩ @ 4.5V, gate-source voltage range of ±20V, gate-source threshold voltage range of 1.2V~2.2V, package The type is SOT23. .
.
Application fields: .
SI2318DS-T1-GE3 (VB1330) is suitable for a variety of fields and application scenarios, mainly used in circuits requiring N-channel power MOSFET. The following are some typical application fields: .
.
1. Power management module: SI2318DS-T1-GE3 can be used in the power management module to provide efficient power conversion and stable current output, improving the power consumption of the system and efficiency. .
2. Power tools and household appliances: It can be used in motor drive circuits in power tools and household appliances to provide efficient and reliable power output. .
3. Battery management system: SI2318DS-T1-GE3 can be used in the charge and discharge control circuit in the battery management system to provide high-efficiency and reliable battery management. .
4. Industrial control systems and communication equipment: SI2318DS-T1-GE3 is suitable for switching circuits in industrial control systems and communication equipment, providing stable power management and current control. .
.
In summary, SI2318DS-T1-GE3 (VB1330) is an N-channel power MOSFET, suitable for power management modules, power tools, household appliances, battery management systems, industrial control systems and communications Equipment and other field modules. It has low resistance and high current carrying capacity, making it suitable for circuits requiring high power and efficiency.

Sample Req

Online

Telephone

400-655-8788

WeChat

Topping

Sample Req
Online
Telephone
WeChat