Model: SI2307DS-T1-GE3.
Silk screen: VB2355.
Brand: VBsemi.
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Parameter description:.
- MOSFET type: P channel.
- Rated voltage (VDS): -30V .
- Rated current (ID): -5.6A .
- Turn-on resistance (RDS(ON)): 47mΩ@10V, 56mΩ@4.5V .
- Threshold voltage ( Vth): -1V .
- Package Type: SOT23.
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Application Introduction:.
This SI2307DS-T1-GE3 MOSFET is a low-voltage P-channel MOSFET, suitable for low-voltage applications Scenes. It has a lower rated voltage and current rating and is suitable for low power switching and power conversion applications. .
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This MOSFET can be widely used in modules in the following fields: .
- Power management module: used in low-power power modules such as low-voltage switching power supplies, DC-DC converters, and inverters. .
- Battery management module: used for low-voltage battery charge and discharge protection, battery management system and other low-power battery applications. .
- Low power switch module: used for low-power applications such as low-voltage switching circuits and low-power switch control. .
- Consumer electronics module: Power management and switching modules used in low-voltage and low-power consumer electronics products. .
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In short, SI2307DS-T1-GE3 MOSFET is suitable for various application scenarios that require low voltage and low power P-channel MOSFET. It provides stable and reliable current control and low power conversion functions, especially suitable for low voltage and low power applications. Application module.