Model: SI2307CDS-T1-E3-VB.
Silk screen: VB2355.
Brand: VBsemi.
Parameters:.
- Channel type: P-channel.
- Rated voltage: -30V.
- Maximum continuous current: -5.6A.
- Static on-resistance (RDS(ON)): 47mΩ @ 10V, 56mΩ @ 4.5V, 20Vgs (±V).
- Threshold voltage (Vth): -1V.
- Package: SOT23.
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Detailed parameter description:.
SI2307CDS-T1-E3-VB is a P-channel metal oxide semiconductor field effect transistor (MOSFET) device with a rated voltage of -30V and a maximum continuous current of -5.6A. Its RDS(ON) performs well at different voltages, 47mΩ @ 10V and 56mΩ @ 4.5V. In addition, its threshold voltage (Vth) is -1V. .
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Application Introduction: .
SI2307CDS-T1-E3-VB is commonly used in power management and switch control applications, especially for circuits requiring P-channel MOSFETs. Due to its P-channel characteristics, it can be used for inverting switches and negative power supply circuits. The SOT23 package makes it easy to integrate into small electronic devices. This type of MOSFET can be used in modules in various fields, such as power inverters, power switches, battery protection circuits, mobile devices and charging management, as well as other applications that require negative power switches. Its low on-resistance and high current handling capability make it very useful in high-efficiency, low-power applications.