Model: SI2306DS-T1-GE3-VB .
Silk screen: VB1330 .
Brand: VBsemi .
.
**Parameters:** .
- Package: SOT23 .
- Channel type: N—Channel .
- Maximum voltage: 30V .
- Maximum current: 6.5A .
- Turn-on resistance (RDS(ON)): 30mΩ @ VGS=10V, 30mΩ @ VGS= 20V .
- Threshold voltage (Vth): 1.2~2.2V .
.
**Application introduction:** .
SI2306DS-T1-GE3-VB is a SOT23 packaged N— Channel MOSFET is suitable for a variety of low-power application scenarios. The following are some modules in the fields it may be used in: .
.
1. **Power module:** Suitable for building low-power power switch modules to provide stable power output. .
.
2. **Battery Management:** In charging and discharging control, it can be used in the battery management circuit to achieve effective control of the battery. .
.
3. **LED lighting:** Due to its moderate current and low turn-on resistance, it may be used in low-power LED lighting drive circuits to adjust the brightness of LEDs. .
.
4. **Power switches and inverters:** Suitable for constructing various low-power power switches and inverters for efficient conversion of electrical energy. .
.
5. **Analog circuit switch:** Suitable for switches in analog circuits, such as analog switches, analog signal modulation and other applications. .
.
Please note that when using this device, be sure to refer to its data sheet for detailed electrical performance and operating conditions. Because it is suitable for low-power applications, it is mainly used in some relatively small-scale electronic products.