SI2302DS-T1-GE3 (VB1240) parameter description: N-channel, 20V, 6A, on-resistance 24mΩ@4.5V, 33mΩ@2.5V, gate-source voltage range 8V (±V), adjustable threshold voltage range 0.45~1V, package: SOT23. . Application introduction: SI2302DS-T1-GE3 is a medium-to-low voltage N-channel MOSFET suitable for applications such as power switching, motor control and voltage regulation. . Its low on-resistance and adjustable threshold voltage make it flexible in a variety of scenarios. . Advantages and applicable fields: With low on-resistance and adjustable threshold voltage, it is suitable for fields requiring low voltage drop and flexibility, such as battery management, portable devices and LED driver modules. .
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