SI2301BDS-T1-GE3 (VB2290) parameter description: Polarity: P-channel; Rated voltage: -20V; Maximum current: -4A; On-resistance: 57mΩ @ 4.5V, 83mΩ @ 2.5V; Gate-source voltage range: 12Vgs (±V) Threshold voltage: -0.81V; Package: SOT23. Application introduction: SI2301BDS-T1-GE3 (VB2290) is a P-channel MOSFET suitable for applications that require current control. . Its low on-resistance can effectively reduce conduction losses and is suitable for high-efficiency circuit design. . Commonly used in power management, DC-DC conversion and other fields, such as adapters, battery chargers, etc. . Advantages: Low on-resistance: With low on-resistance, it reduces power loss and heat generation. . Reliability: VBsemi is a well-known semiconductor brand with reliable product quality. . Applicable package: The small SOT23 package is suitable for designs with limited space. . Applicable modules: SI2301BDS-T1-GE3 (VB2290) is suitable for modules that require high-efficiency power conversion, such as adapters, battery chargers, etc. . Its low on-resistance and small package are suitable for high-efficiency power conversion in limited space. .
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