SI1967DH-T1-GE3 detailed parameter description: .
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- Polarity: 2 P channels.
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- Rated voltage: -20V.
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- Rated Current: -1.5A.
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- On-resistance: 230mΩ @ 4.5V, 276mΩ @ 2.5V.
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- Gate-source voltage: 12Vgs (±V).
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- Threshold voltage: -0.6~-2Vth (V).
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- Package type: SC70-6.
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Application introduction:.
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SI1967DH-T1-GE3 is a dual P-channel MOSFET with negative voltage and current ratings suitable for use in a variety of power management and power amplifier applications. It has moderate on-resistance and high performance characteristics to provide reliable and efficient current switching. .
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This device realizes the on and off of the switch tube by controlling the gate-source voltage of 12Vgs (±V), and realizes the control of the current and the state conversion of the switch. Its low on-resistance can reduce power loss and improve system efficiency. .
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SI1967DH-T1-GE3 adopts SC70-6 package, which is compact and suitable for use in application scenarios with limited space. .
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This device is widely used in power switches, power inverters, motor drivers and other fields. Due to its dual P-channel characteristics, it can be used to control and switch negative voltage circuits, making it ideal for negative power supply applications. In these areas, SI1967DH-T1-GE3 can provide reliable power switching control and achieve high-efficiency current transmission and switching operations. .
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In short, SI1967DH-T1-GE3 is a dual P-channel MOSFET suitable for use in various application modules of power management and power amplifiers, especially in power supplies In fields such as switches and motor drives, as well as in circuit scenarios where negative voltage needs to be controlled and switched. .
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