**RU1HL13L-VB Detailed parameter description: **.
.
- **Brand: ** VBsemi.
- **Silk screen: ** VBE2101M.
- **Package: ** TO252.
- **Parameters: ** .
- P—Channel.
- Rated voltage: -100V.
- Maximum current: -15A.
- RDS(ON): 120mΩ @ VGS=10V, VGS=20V.
- Threshold voltage (Vth): -2V.
.
**Application introduction: **.
.
RU1HL13L-VB is a P-channel field effect transistor suitable for low resistance and high voltage power switching and amplification applications. .
.
**Field modules and functions:**.
.
1. **Power switch:** It can be used for high-voltage, low-resistance power switches in power modules, suitable for power supplies and inverters. .
.
2. **Power amplifier:** It is used to build high-voltage, high-power audio and RF power amplifiers, suitable for audio and communication systems. .
.
3. **Motor control:** It plays a role in high-voltage motor control, such as for electric vehicles and industrial drive systems. .
.
**Precautions for use:**.
.
1. **Voltage and current limit:** Do not exceed the specified maximum voltage and current to prevent device damage. .
.
2. **Temperature control:** Maintain appropriate temperature during operation to avoid overheating. .
.
3. **Static protection:** Take anti-static measures during handling and installation to prevent static damage. .
.
4. **Threshold voltage:** Ensure the correct threshold voltage to ensure the device is within the normal operating range. .
.
The above information is for reference only and the specific application needs to be adjusted according to the actual situation.