Model: RU1HE12L-VB.
Silk screen: VBE1101M.
Brand: VBsemi.
Parameters:.
- Package type: TO252.
- Channel type: N—Channel.
- Maximum drain voltage (Vds): 100V.
- Maximum drain current (Id): 18A.
- Static drain-source resistance (RDS(ON)): 115mΩ @ VGS=10V, VGS=20V.
- Threshold voltage (Vth): 1.6V.
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Package: TO252.
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Application Introduction:.
RU1HE12L-VB is an N-Channel trench MOSFET suitable for a variety of circuit and module designs, especially in applications that require high performance N-Channel MOSFETs. .
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Field module application: .
1. **Power module:** Suitable for module design such as switching power supply and power inverter, which can provide efficient power conversion and stable power output. .
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2. **Motor drive module:** Due to its high current and low leakage voltage characteristics, it can be used in motor drive and control modules to provide reliable current output and driving performance. .
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3. **Battery protection module:** Used in battery charge and discharge management circuits to provide efficient battery management and protection functions. .
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4. **LED lighting module:** In LED lighting systems that require high brightness and high power, RU1HE12L-VB can be used in switching power supply design to achieve efficient LED lighting. .
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5. **Current control module:** Suitable for modules that require precise control of current, such as current source, current amplifier, etc. .
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Please note that the above are some typical application scenarios. In actual use, it is necessary to select and design according to specific circuit and system requirements. When integrating RU1HE12L-VB, it is recommended to read its data sheet carefully to obtain detailed electrical characteristics and operation information.