Model: RSD050N10TL. Silkscreen: VBE1101M. Brand: VBsemi. . Detailed parameter description:. - Type: N-channel MOSFET. - Maximum withstand voltage: 100V. - Maximum current: 18A. - On-resistance: 115mΩ @10V, 121mΩ @4.5V. - Gate-source voltage: 20Vgs (±V). - Gate threshold voltage: 1.6Vth. - Package: TO252. . Application introduction:. RSD050N10TL is an N-channel MOSFET suitable for high voltage and high current applications. Its maximum withstand voltage is 100V, maximum current is 18A, with low on-resistance and high performance. . . This device is suitable for module design in multiple fields, including: . 1. Power management module: suitable for high-voltage power switches and DC-DC converters, etc. . 2. Motor drive module: can be used to drive high-power motors and automotive drive systems. . 3. High-voltage load switch module: suitable for high-voltage load switches and power controllers. . . In short, RSD050N10TL is suitable for module design in high-voltage and high-current application fields, including power management, motor drive and high-voltage load switch modules, etc.
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