RSD050N10TL-VB, a N-channel TO252 MOSFET datasheet parameters video explanation

Model: RSD050N10TL.
Silkscreen: VBE1101M.
Brand: VBsemi.
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Detailed parameter description:.
- Type: N-channel MOSFET.
- Maximum withstand voltage: 100V.
- Maximum current: 18A.
- On-resistance: 115mΩ @10V, 121mΩ @4.5V.
- Gate-source voltage: 20Vgs (±V).
- Gate threshold voltage: 1.6Vth.
- Package: TO252.
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Application introduction:.
RSD050N10TL is an N-channel MOSFET suitable for high voltage and high current applications. Its maximum withstand voltage is 100V, maximum current is 18A, with low on-resistance and high performance. .
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This device is suitable for module design in multiple fields, including: .
1. Power management module: suitable for high-voltage power switches and DC-DC converters, etc. .
2. Motor drive module: can be used to drive high-power motors and automotive drive systems. .
3. High-voltage load switch module: suitable for high-voltage load switches and power controllers. .
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In short, RSD050N10TL is suitable for module design in high-voltage and high-current application fields, including power management, motor drive and high-voltage load switch modules, etc.