Model: RQJ0303PGDQATL-E-VB.
Silk screen: VB2355.
Brand: VBsemi.
Parameter description:.
- Polarity: P channel.
- Rated voltage: -30V.
- Maximum continuous drain current: -5.6A.
- Static drain-source resistance (RDS(ON)): 47mΩ @ 10V, 56mΩ @ 4.5V.
- Gate-source Voltage (Vgs): 20V (±V).
- Turn-on voltage (gate threshold voltage): -1V.
- Package: SOT23.
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Application introduction: .
RQJ0303PGDQATL -E-VB is a P-channel field effect transistor (MOSFET) device with high drain-source resistance and low gate threshold voltage. These properties make it useful in a variety of applications. .
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Application fields: .
1. **Power module**: Since RQJ0303PGDQATL-E-VB has low drain-source resistance, it is suitable for switching power supply and battery management system, with Help improve energy conversion efficiency. .
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2. **DC-DC converter**: This MOSFET device can be used in DC-DC converters to adjust voltage and current to meet the needs of various electronic devices. .
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3. **Battery Protection**: In portable devices and battery-driven applications, RQJ0303PGDQATL-E-VB can be used in battery protection circuits to ensure battery safety and reliability. .
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4. **Motor Control**: It can also be used for small motor controls and drives, such as fans, vibration motors and small power tools. .
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5. **Signal switch**: In various electronic equipment, this MOSFET can be used for signal switching and circuit protection to achieve high performance and low power consumption. .
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In short, RQJ0303PGDQATL-E-VB is a versatile P-channel MOSFET device suitable for various applications requiring high performance, low resistance and reliability. It can be used in a variety of electronic modules such as power management, battery protection, motor control, signal switches, etc.