Model: PHT6N06T-VB. Silk screen: VBJ1695. Brand: VBsemi. Parameters:. - Channel type: N-channel. - Rated voltage: 60V. - Maximum continuous current: 4A. - Static on-resistance (RDS(ON)): 76mΩ @ 10V, 85mΩ @ 4.5V, 20Vgs (±V). - Threshold voltage (Vth): 1.53V. - Package: SOT223. . Detailed parameter description:. PHT6N06T-VB is an N-channel metal oxide semiconductor field effect transistor (MOSFET) device with a rated voltage of 60V and a maximum continuous current of 4A. Its RDS(ON) performs well at different voltages, 76mΩ @ 10V and 85mΩ @ 4.5V. In addition, its threshold voltage (Vth) is 1.53V. . . Application Introduction: . PHT6N06T-VB is commonly used in power management, power switching and power converter applications, especially for circuits requiring N-channel MOSFETs. The SOT223 package makes it easy to integrate into small electronic devices. This type of MOSFET can be used in modules in various fields, such as power inverters, power switches, battery protection circuits, mobile devices, power management, power amplifiers, power tools and other low to medium power applications. Its low on-resistance and moderate current handling capability make it very useful in high-efficiency, low-power applications.
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