P9006EDG (VBE2610N) parameter description: P channel, -60V, -38A, on-resistance 61mΩ@10V, 72mΩ@4.5V, 20Vgs (±V), threshold voltage -1.3V, package: TO252. . Application Introduction: P9006EDG is suitable for P-channel MOSFETs in applications such as power switches and inverters. . Its high current carrying capacity and low on-resistance help improve efficiency and reduce power loss. . Applicable fields and modules: Suitable for modules in fields such as power switches, inverters and power amplifiers, especially suitable for scenarios with high power requirements. .
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