NTE4153NT1G detailed parameter description:.
- Polarity: N channel.
- Rated voltage: 20V.
- Rated current: 1A.
- On-resistance: 200mΩ @ 4.5V, 230mΩ @ 2.5V.
- Gate-source voltage: 12Vgs (±V).
- Threshold voltage: 0.6Vth (V).
- Package type: SC75-3.
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Application Introduction :.
NTE4153NT1G is an N-channel MOSFET suitable for various power management and low-power applications. It has moderate voltage and current ratings to provide reliable and efficient current switching. .
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By controlling the gate-source voltage of 12Vgs (±V), the switch tube can be turned on and off, and the current can be controlled and the switching state converted. Lower on-resistance helps reduce power consumption and improve system efficiency. .
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NTE4153NT1G adopts SC75-3 package and is suitable for various circuit boards and modules. .
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This device is mainly used in circuit control, signal processing, power switching and other situations requiring low power consumption in the low-power field. .
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In summary, NTE4153NT1G is an N-channel MOSFET suitable for power management and low-power applications. It is especially suitable for application modules such as circuit control, signal processing and power switches in the low-power field.