**NTB75N03-06T4G-VB**.
.
**Silk screen:** VBL1303 .
**Brand:** VBsemi .
**Parameter:** TO263;N—Channel Channel, 30V; 170A; RDS(ON)=3mΩ@VGS=10V, VGS=20V; Vth=1.7V .
.
**Package:** TO263 .
.
* *Detailed parameter description:** .
- **Channel type:** N—Channel .
- **Maximum withstand voltage:** 30V .
- **Maximum current:** 170A .
- **On-resistance:** 3mΩ (at VGS=10V), 3mΩ (at VGS=20V) .
- **Threshold voltage:** 1.7V .
.
**Application Introduction:** .
This device is an N-Channel MOSFET, suitable for high-power modules that need to control forward current. Can be used in high current applications such as power amplification, power switching and current regulation. .
.
**Function:** .
- Control forward current, suitable for high power modules. .
- Plays a key role in power amplification and power switching circuits. .
.
**Application field module:**.
1. **Power amplification module:** Used to build high-power amplification circuits, suitable for applications such as audio amplifiers. .
2. **Power switch module:** Used in power systems that require high current switching to ensure reliable power switching. .
3. **Current regulation module:** Used for high current applications to ensure normal operation of the system. .
.
**Usage Precautions:**.
1. **Voltage and current limits:** Do not exceed the specified maximum voltage and current. .
2. **Temperature control:** Pay attention to the temperature of the device when it is working to avoid overheating. .
3. **Proper Heat Dissipation:** For high power applications, make sure to provide adequate heat dissipation. .
.
If you need further information or have other questions, please let me know.