NT2955G (VBE2610N) parameter description: P channel, -60V, -38A, on-resistance 61mΩ@10V, 72mΩ@4.5V, gate-source voltage range 20V (±V), threshold voltage -1.3V, package: TO252. . Application Introduction: NT2955G is a P-channel MOSFET suitable for high-power applications such as power switches and inverters. . It can handle larger currents and voltages and is suitable for scenarios with high power requirements. . Advantages and applicable fields: It has large current and voltage carrying capacity and is suitable for high-power applications, such as power switches, inverters, motor drives and other modules. .
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