**IRFUC20PBF-VB Detailed parameter description: **.
.
- **Brand:** VBsemi.
- **Model:** IRFUC20PBF-VB.
- **Silk screen: ** VBFB165R02.
- **Package:** TO251.
- **Type:** N-Channel channel MOSFET.
- **Voltage level:** 650V.
- **Current level:** 2A.
- **On-resistance (RDS(ON)):** 4300mΩ @ VGS=10V, VGS=20V.
- **Gate-source voltage threshold (Vth) :** 2V.
.
**Application introduction:**.
.
IRFUC20PBF-VB is an N-Channel channel MOSFET in TO251 package. With higher voltage (650V) and moderate current capacity (2A), it is suitable for medium power electronic modules. .
.
**Application fields:**.
.
1. **Power switch:** Used for medium power power switches, such as power inverters. .
.
2. **Motor drive:** As part of the motor controller, it provides high-voltage switching control of the motor. .
.
3. **Inverter:** In an inverter circuit, DC power is converted into AC power. .
.
**Function:**.
.
- Provides effective power control in medium power power switches. .
- As part of the motor controller, it realizes high-voltage switching control of the motor. .
- Implement DC to AC conversion in an inverter circuit. .
.
**Usage Precautions:**.
.
1. **Voltage and current limits:** Do not exceed the specified voltage and current limits to avoid damaging the device. .
.
2. **Heat dissipation:** In high-power applications, appropriate heat dissipation measures are required to ensure that the device is within the normal operating temperature range. .
.
3. **Anti-static measures:** Take anti-static measures during handling and installation to prevent damage to the device caused by electrostatic discharge. .
.
The above is a brief description, the specific design and application need to be carried out according to the specific module and circuit requirements.