Model: IRF5851TRPBF-VB.
Silk screen: VB5222.
Brand: VBsemi.
Parameters:.
- Channel type: N+P channel.
- Rated voltage: ±20V.
- Maximum continuous current: 7A (forward) / -4.5A (reverse).
- Static on-resistance (RDS(ON)): 20mΩ @ 4.5V (forward) / 70mΩ @ 4.5V (reverse), 29mΩ @ 2.5V (forward) / 106mΩ @ 2.5V (reverse).
- Threshold voltage (Vth): 0.71V (forward) / -0.81V (reverse).
- Package: SOT23-6.
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Detailed parameter description: .
IRF5851TRPBF-VB is an N+P channel metal oxide semiconductor field effect transistor (MOSFET) device with dual channels, One of them is N channel and the other is P channel. It supports a rated voltage of ±20V and has a maximum continuous current of 7A (forward) and -4.5A (reverse). RDS(ON) performs well at different voltages, 20mΩ @ 4.5V and 29mΩ @ 2.5V in the forward direction, and 70mΩ @ 4.5V and 106mΩ @ 2.5V in the reverse direction. In addition, the threshold voltages for forward and reverse directions are 0.71V and -0.81V respectively. .
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Application Introduction: .
IRF5851TRPBF-VB is a multifunctional dual-channel MOSFET suitable for a variety of circuit applications. It is commonly used in modules in the fields of power management, power switches, power converters, battery protection circuits, inverters, etc. Due to its dual-channel design, it allows greater flexibility in design and can be used in applications under a variety of current and voltage conditions. The SOT23-6 package makes it easy to mount to a circuit board. This type of MOSFET can provide reliable performance in circuits requiring N- and P-channel devices and is suitable for a variety of fields, including electronics, communications, industrial control, etc.