**IPD30N06S4L-23-VB Detailed parameter description:**.
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- **Brand:** VBsemi.
- **Model:** IPD30N06S4L-23-VB.
- **Silkscreen:** VBE1638.
- **Package:** TO252.
- **Type:** N-Channel trench MOSFET.
- **Voltage level:** 60V.
- **Current level:** 45A.
- **On-resistance (RDS(ON)):** 24mΩ @ VGS=10V, VGS=20V.
- **Gate-source voltage threshold (Vth):** 1.8V.
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**Application introduction:**.
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IPD30N06S4L-23-VB is an N-Channel trench MOSFET in TO252 package. With high voltage (60V), high current capacity (45A) and low on-resistance (24mΩ), it is suitable for high-performance electronic modules. .
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**Application fields:**.
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1. **Power module:** Used in switching power supplies and voltage regulators to provide high-efficiency power conversion. .
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2. **Motor control:** As part of the motor drive, it realizes effective control of the motor. .
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3. **Inverter:** Used in inverter circuits to convert DC power to AC power. .
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**Function:**.
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- Provide high-efficiency power conversion. .
- Realize effective control of the motor. .
- Realize DC to AC conversion in inverter circuits. .
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**Precautions for use:**.
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1. **Voltage and current limits:** Do not exceed the specified voltage and current limits to avoid damage to the device. .
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2. **Heat dissipation:** In high power applications, appropriate heat dissipation measures are required to ensure that the device is within the normal operating temperature range. .
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3. **Anti-static measures:** Take anti-static measures during handling and installation to prevent electrostatic discharge from damaging the device. .
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The above is a brief description, and the specific design and application needs to be carried out according to the specific module and circuit requirements.