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IPD30N06S2L-13-VB, a N-channel TO252 MOSFET datasheet parameters video explanati
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This model is the VBsemi brand N-channel transistor IPD30N06S2L-13-VB, with the silk screen VBE1638. Its detailed parameter description and application introduction are as follows:.
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- Voltage: 60V.
- Current: 45A.
- On resistance: 24mΩ @ 10V, 28mΩ @ 4.5V.
- Gate-source voltage range: ±20V.
- Threshold voltage: 1.8V.
- Package: TO252.
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This N-channel transistor is commonly used in power switching and current control applications. Due to its high current and low on-resistance, it is suitable for the following modules:.
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1. Power module: This transistor can be used as a power switch to control the input and output of high-frequency converters. .
2. Motor drive module: Suitable for DC motor and stepper motor drive circuits to provide reliable switching action. .
3. Lighting module: can be used in LED lamp drive circuit to achieve efficient switch control. .
4. Battery management module: can be used in battery protection circuit to provide overcurrent and overvoltage protection. .
5. Vehicle electronic module: in the field of automotive electronics, it can be used in electric vehicle control circuit to provide efficient energy conversion. .
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In short, the IPD30N06S2L-13-VB transistor is suitable for modules in multiple fields, including power supply, motor drive, lighting, battery management and vehicle electronics. .

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