**IPD110N12N3G-VB**.
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**Silkscreen:** VBE1101N .
**Brand:** VBsemi .
**Parameters:** TO252; N—Channel, 100V; 70A; RDS(ON)=9mΩ@VGS=10V, VGS=20V; Vth=3.2V .
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**Package:** TO252 .
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**Detailed parameter description:** .
- **Channel type:** N—Channel .
- **Maximum withstand voltage:** 100V .
- **Maximum current:** 70A .
- **On-resistance:** 9mΩ (at VGS=10V), 9mΩ (at VGS=20V) .
- **Threshold voltage:** 3.2V .
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**Application Introduction:** .
This device is an N-Channel MOSFET, suitable for high voltage and high current applications that require forward current control, such as power switches and motor drives. .
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**Function:** .
- Controls forward current, suitable for high voltage and high current modules that require N-Channel channels. .
- Plays a key role in power switches and motor drives. .
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**Application Area Modules:**.
1. **Power Switch Module:** Used to build a reliable forward current switching circuit to ensure the normal operation of the power system. .
2. **Motor Drive Module:** Applicable to motor drive systems that require high voltage and high current control. .
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**Precautions for use:**.
1. **Voltage and current limit:** Do not exceed the specified maximum voltage and current. .
2. **Temperature control:** Pay attention to the temperature of the device during operation to avoid overheating. .
3. **Threshold voltage selection:** Select the appropriate threshold voltage based on application requirements. .
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If you need further information or have other questions, please let me know.