VBsemi IPD100N06S4-03-VB MOSFET parameters: .
- Package: TO252.
- Channel type: N—Channel.
- Maximum voltage: 60V.
- Maximum current: 110A.
- RDS(ON): 4.5mΩ @ VGS=10V, VGS=20V.
- Threshold voltage: 2.8V.
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Application Introduction: .
This MOSFET is suitable for high power applications, Such as power amplification, switching power supply and motor control. Its high voltage and current characteristics enable excellent performance in electronic systems requiring high power. .
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Application field module: .
1. Power amplifier: used for power switch of power amplifier. .
2. Switching power supply: used as a power switching element in high-power switching power supply. .
3. Motor control: used for motor drive and control that require high power. .
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Function: .
1. Provide reliability and performance for high-power applications. .
2. Realize high-efficiency power switches in power amplifiers and high-power switching power supplies. .
3. Suitable for applications requiring high-power motor control and drive. .
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Precautions for use: .
1. Please operate according to the maximum ratings provided in the data sheet to avoid damaging the equipment. .
2. Consider appropriate heat dissipation measures in the design to ensure that the device operates stably at the rated operating temperature. .
3. Avoid exceeding the maximum rated current and voltage to prevent overloading the equipment. .
4. During use, pay attention to electrostatic protection to avoid damaging sensitive components.