HUF75321D3ST-VB, a N-channel TO252 MOSFET datasheet parameters video explanation

Model: HUF75321D3ST-VB.
Silk screen: VBE1638.
Brand: VBsemi.
Parameters:.
- Channel type: N-channel.
- Rated voltage: 60V.
- Maximum continuous current: 45A.
- Static on-resistance (RDS(ON)): 24mΩ @ 10V, 28mΩ @ 4.5V, 20Vgs (±V).
- Threshold voltage (Vth): 1.8V.
- Package: TO252.
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Detailed parameter description:.
HUF75321D3ST-VB is an N-channel metal oxide semiconductor field effect transistor (MOSFET) device with a rated voltage of 60V and a maximum continuous current of 45A. Its RDS(ON) performs well at different voltages, which are 24mΩ @ 10V and 28mΩ @ 4.5V. In addition, its threshold voltage (Vth) is 1.8V. .
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Application Introduction: .
HUF75321D3ST-VB is a high-performance N-channel MOSFET suitable for a variety of circuit applications, especially for applications requiring high current and high voltage. It is commonly used in modules for power switches, motor control, power converters, power inverters, battery protection circuits and other fields that require high-performance MOSFETs. The TO252 package makes it suitable for a variety of applications such as industrial control, power amplifiers, power tools, electric vehicles and other high-power applications. This type of MOSFET has low on-resistance and high current handling capability, providing excellent performance and high efficiency, and is an ideal choice for applications that require high-power switching.