Model: FQD13N10L-VB.
Silkscreen: VBE1101M.
Brand: VBsemi.
Parameters:.
- Channel type: N-channel.
- Rated voltage: 100V.
- Rated current: 18A.
- Static on-resistance (RDS(ON)): 115mΩ @ 10V, 121mΩ @ 4.5V, 20Vgs (±V).
- Threshold voltage (Vth): 1.6V.
- Package type: TO252.
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Application introduction:.
FQD13N10L-VB is an N-channel field effect transistor (FET) with high rated voltage and current characteristics, and relatively low on-resistance. This makes it suitable for use in high power electronic applications to effectively control current and voltage. .
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Application fields: .
1. Power switch module: FQD13N10L-VB can be used in power switch circuits such as switching regulators, DC-DC converters and battery management systems to achieve efficient power conversion and stable power output. .
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2. Motor control: In motor drive circuits, motor controllers and electric vehicles, this transistor can be used for motor start and stop, speed regulation and efficiency improvement. .
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3. High power amplifier: In audio amplifiers and radio frequency (RF) power amplifiers, FQD13N10L-VB can be used to achieve high power output and signal amplification. .
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4. Industrial automation: In industrial automation control systems, it can be used to switch and control high power devices such as electric furnaces and motors. .
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In short, FQD13N10L-VB is an N-channel field effect transistor suitable for high power electronic applications, suitable for power management, motor control, high power amplifiers and industrial automation. Its TO252 package is suitable for effective heat dissipation and mounting.