Model: FDT439N-VB.
Silk screen: VBJ1322.
Brand: VBsemi.
Parameters: .
- Channel type: N channel.
- Rated voltage: 30V.
- Rated current: 7A.
- Static on-resistance (RDS(ON)): 25mΩ @ 10V, 38mΩ @ 4.5V, 20Vgs (±V).
- Threshold voltage (Vth): 1.5V.
- Package Type: SOT223.
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Application Introduction: .
FDT439N-VB is an N-channel field effect transistor (FET) with moderate voltage and current characteristics. It is suitable for electronic applications requiring current control and low on-resistance. SOT223 package is suitable for compact circuit design. .
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Application fields: .
1. Power switch module: FDT439N-VB can be used in power switching circuits, such as switching regulators, DC-DC converters and power amplifiers, to achieve efficient electrical energy conversion and stable power output. .
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2. Battery management: In battery-powered systems, charging equipment and portable electronic devices, this transistor can be used for battery protection and battery charge/discharge control. .
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3. Circuit protection: In circuit protection devices, this N-channel field effect transistor can be used for over-current protection, short-circuit protection and voltage protection to ensure the safe operation of the circuit. .
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4. Low-power electronics: In low-power electronic applications, such as sensor interfaces, microcontroller power supplies, and small consumer electronic devices, FDT439N-VB can be used for circuit control and power management. .
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In short, FDT439N-VB is an N-channel field effect transistor suitable for various electronic applications, such as power management, battery management, circuit protection and low-power electronic applications. Its SOT223 package makes it suitable for compact circuit designs.