Model: FDT3612-VB.
Silk screen: VBJ1101M.
Brand: VBsemi.
Package: SOT223.
Detailed parameter description:.
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Channel Type: N—Channel.
Maximum Drain Current: 5A.
Maximum Drain-Source Voltage: 100V.
On-Resistance: RDS(ON)=100mΩ @ VGS=10V, VGS=20V.
Gate Threshold Voltage: Vth=2~4V.
Application Introduction:.
FDT3612-VB is an N—Channel field effect transistor with moderate drainage current, high drain voltage and low on-resistance. It adopts SOT223 standard package and is suitable for a variety of electronic applications. .
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Main application area modules: .
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Power switch module: It is suitable for power switch module to achieve efficient power control and management, especially in low to medium power applications. .
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Current control module: Due to its moderate performance parameters, it can be used in current control module to achieve effective control of load current. .
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Battery protection module: It is suitable for battery protection circuit to provide effective protection for the battery. .
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Precautions for use: .
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Please use it according to the specification sheet and application guide provided by the manufacturer, and ensure that the working conditions are within the specified range of the component. .
Ensure that the circuit design is reasonable to prevent damage to the device due to overcurrent, overvoltage and other conditions. .
Pay attention to proper heat dissipation design, especially in high power applications, to ensure that the device is within the normal operating temperature range. .
Follow the relevant standards for welding and packaging to ensure reliable connection between the device and the circuit board.