Model: FDS4935BZ-NL&38-VB.
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Screen printing: VBA4338.
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Brand: VBsemi.
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Package: SOP8.
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** Detailed parameter description: **.
- **Channel Type:** 2 P—Channel.
- **Maximum Drain Current:** -7A.
- **Maximum Drain-Source Voltage:** -30V.
- **On-Resistance:** RDS(ON)=35mΩ @ VGS=10V, VGS =20V.
- **Threshold Voltage (Gate Threshold Voltage):** Vth=-1.5V.
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**Application Introduction:**.
FDS4935BZ-NL&38-VB is a This dual P-Channel field effect transistor has the characteristics of high leakage current, low leakage voltage, low on-resistance, etc. It adopts SOP8 standard package and is suitable for various electronic applications. .
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**Main application field modules:**.
1. **Power switch module:** Due to the dual P-Channel structure of FDS4935BZ-NL&38-VB, it can be used for power switch modules, Enable efficient power control and management. .
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2. **Current Control Module:** The device's high leakage current and low on-resistance make it excellent in current control modules for precise current control applications. .
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3. **Drive and amplification module:** Suitable for drive and amplification modules that require P-Channel field effect transistors to ensure reliable amplification and transmission of signals. .
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4. **Battery protection module:** Due to its low leakage current and low on-resistance characteristics, it can be used in battery protection circuits to provide effective protection for the battery. .
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Please select the appropriate components based on your specific system design needs and ensure that the appropriate specifications and design guidelines are followed.