Model: FDN336P-NL-VB.
Silk screen: VB2290.
Brand: VBsemi.
Parameter description: .
- Polarity: P channel.
- Rated voltage: -20V.
- Maximum continuous drain current: -4A.
- Static drain-source resistance (RDS(ON)): 57mΩ @ 4.5V, 83mΩ @ 2.5V.
- Gate-source Voltage (Vgs): 12V (±V).
- Turn-on voltage (gate threshold voltage): -0.81V.
- Package: SOT23.
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Application introduction: .
The FDN336P-NL-VB is a P-channel field-effect transistor (MOSFET) device with low drain-source resistance and low power consumption, making it suitable for a variety of low-voltage, low-power electronic applications. .
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Application fields: .
1. **Portable devices**: FDN336P-NL-VB is often used in portable devices, such as smartphones, tablets and portable audio equipment, for power management , battery protection and signal switch. .
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2. **Battery Management**: In portable devices and low-power sensors, this MOSFET device can be used for battery protection, cell balancing and low-power battery management. .
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3. **Signal switch**: FDN336P-NL-VB can be used for low-voltage and low-power signal switches and analog switches, used to control circuit switching and signal transmission. .
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4. **Embedded Systems**: In embedded systems, sensor interfaces and small controllers, this MOSFET can also be used in low-power electronic applications. .
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In short, FDN336P-NL-VB is a low voltage and low power consumption P-channel MOSFET, suitable for various low voltage and low power electronic applications that require low drain-source resistance and low power consumption. field. It can be used in modules such as portable devices, battery management, signal switches and embedded systems.