Model: FDG6303N-VB.
Silk screen: VBK3215N.
Brand: VBsemi.
Parameters: .
- Channel type: 2 N channels.
- Rated voltage: 20V.
- Rated current: 2A.
- Static on-resistance (RDS(ON)): 150mΩ @ 4.5V, 170mΩ @ 2.5V, 8Vgs (±V).
- Threshold voltage (Vth): 0.8 V.
- Package Type: SC70-6.
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Application Introduction: .
FDG6303N-VB is a dual N-channel field effect transistor (FET) suitable for a variety of electronic applications. Its key features include low threshold voltage and low on-resistance, allowing it to operate effectively at low voltage and low power conditions. Its SC70-6 package is suitable for space-constrained applications. .
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Application fields: .
1. Power switch module: FDG6303N-VB can be used in power switching circuits, such as switching regulators, DC-DC converters and power amplifiers, to achieve efficient electrical energy Convert. .
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2. Mobile devices: In mobile phones, tablets and portable consumer electronic devices, this transistor can be used for power management, battery charging and discharge control. .
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3. Wireless communication: In radio frequency (RF) front-end modules, antenna switches and power amplifiers, FDG6303N-VB can be used for circuit control and optimization. .
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4. Automatic control system: In automatic control and sensing systems, it can be used to perform switching operations and current control. .
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In short, FDG6303N-VB is a dual N-channel field effect transistor suitable for a variety of electronic fields, including power management, mobile devices, wireless communications and automatic control systems. Its SC70-6 package makes it suitable for space-constrained applications.