Model: AP9997GK-VB. Silkscreen: VBJ1101M. Brand: VBsemi. Parameters:. - Type: N-channel. - Rated voltage (Vds): 100V. - Maximum continuous current (Id): 5A. - On-resistance (RDS(ON)): 100mΩ @ 10V. - Gate-source voltage range (Vgs): 20V (positive and negative). - Threshold voltage range (Vth): 2-4V. - Package: SOT223. . Application Introduction:. AP9997GK-VB is an N-channel field effect transistor (MOSFET) with high rated voltage and moderate current handling capability. It is suitable for a variety of applications, especially those requiring high voltage switching and current control. . . Detailed parameter description: . 1. **Type**: This is an N-channel MOSFET, which means it turns on when the input positive voltage. This type of MOSFET is usually used in switching and regulation circuits. . . 2. **Rated voltage (Vds)**: The maximum drain-source voltage it can withstand is 100V. This means that under normal operating conditions, its voltage should not exceed 100V. . . 3. **Maximum continuous current (Id)**: The maximum current handling capacity of this MOSFET is 5A. Although it is not very high, it is still enough in many high-voltage applications. . . 4. **On-resistance (RDS(ON))**: RDS(ON) is the resistance in the on state, which affects the power consumption and efficiency of the MOSFET. At a gate-source voltage of 10V, its RDS(ON) is 100mΩ, indicating that the power consumption in the on state is relatively low. . . 5. **Gate-Source Voltage Range (Vgs)**: The gate-source voltage range of the MOSFET is 20V, which means that a voltage of up to 20V is required to control its conduction state. . . 6. **Threshold Voltage Range (Vth)**: The threshold voltage range of this MOSFET is 2-4V. This is the gate-source voltage range that starts the MOSFET to conduct. . . 7. **Package**: This MOSFET uses the SOT223 package, which is a small package suitable for small circuit boards and space-constrained applications. . . Applications: . AP9997GK-VB This MOSFET is suitable for a variety of high-voltage electronic applications, including but not limited to the following modules: . . 1. **Power Switch**: It can be used for high-voltage switching power supplies, such as voltage conversion and power stabilization. . . 2. **Motor Drive**: It is used in motor controllers to control the speed and direction of the motor. . . 3. **Power Inverter**: Used in inverter circuits to convert DC to AC, such as solar inverters and power inverters. . . 4. **High Voltage Power Management**: Used in high voltage power management and current control circuits, such as industrial electronic equipment. . . 5. **Battery Management**: Used in applications that require high voltage battery charge and discharge management to ensure safe and efficient battery use. . . In short, this N-channel MOSFET is suitable for high voltage electronic modules and devices that require high voltage switching and current control, providing the functions of power control and current management. .
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