Model: AP4563GH.
Silkscreen: VBE5415.
Brand: VBsemi.
.
Detailed parameter description:.
- Type: N+P channel MOSFET.
- Maximum withstand voltage: ±40V.
- Maximum current: 50A/-50A.
- On-resistance: 15mΩ @10V, 18.75mΩ @4.5V.
- Gate-source voltage: 20Vgs (±V).
- Gate threshold voltage: ±1Vth.
- Package: TO252-5.
.
Application introduction:.
AP4563GH is an N+P channel MOSFET suitable for applications that require simultaneous control of N channel and P channel MOSFETs. Its maximum withstand voltage is ±40V, maximum current is 50A/-50A, with low on-resistance and high performance. .
.
The device is suitable for module design in multiple fields, mainly including: .
1. Power management module: Suitable for power management module responsible for current control and power switching. .
2. Motor drive module: Can be used to drive high-power motors, such as drive circuits in electric vehicles and industrial machinery. .
3. Inverter module: Suitable for high-power inverters such as solar inverters and UPS systems. .
.
In short, AP4563GH is suitable for module design in high-power application fields that require simultaneous control of N-channel and P-channel MOSFETs, including power management, motor drive, and inverter modules.