Model: AP4525GEH-VB.
Silk screen: VBE5415.
Brand: VBsemi.
Parameters:.
- Channel type: N+P channel.
- Rated voltage: ±40V.
- Maximum continuous current: 50A / -50A.
- Static on-resistance (RDS(ON)): 15mΩ @ 10V, 18.75mΩ @ 4.5V, 20Vgs (±V).
- Threshold voltage (Vth): ±1V.
- Package: TO252-5.
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Detailed parameter description:.
AP4525GEH-VB is a metal oxide semiconductor field effect transistor (MOSFET) device with N+P channel that can simultaneously control positive and negative voltages, with a rated voltage of ±40V and a maximum continuous current of 50A / -50A. Its RDS(ON) performs well at different voltages, which are 15mΩ @ 10V and 18.75mΩ @ 4.5V respectively. The threshold voltage (Vth) is ±1V. .
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Application Introduction: .
AP4525GEH-VB is commonly used in power management, power switching and power converter applications, especially for circuits that need to control positive and negative voltages at the same time. The characteristics of N+P channel make it very suitable for modules in various fields such as power switching, power inverters, power converters, motor control, battery protection circuits, etc. The TO252-5 package makes it easy to integrate into various electronic devices and circuits. This type of MOSFET has low on-resistance and high current carrying capacity, which can provide excellent performance and high efficiency. It is suitable for applications requiring high power switching, especially circuit designs that need to control positive and negative voltages at the same time.