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AM30N06-39D-T1-PF-VB, a N-channel TO252 MOSFET datasheet parameters video explan
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**HUF76423P3-VB**.
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**Silkscreen:** VBM1638.
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**Brand:** VBsemi.
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**Parameters:**.
- **Package:** TO220.
- **Type:** N-Channel.
- **Voltage:** 60V.
- **Current:** 50A.
- **On-resistance:** RDS(ON)=24mΩ@VGS=10V, VGS=20V.
- **Threshold voltage:** Vth=1.8V.
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**Application introduction:**.
HUF76423P3-VB is an N-Channel field effect transistor in TO220 package. Its low on-resistance, high current carrying capacity and moderate threshold voltage make it have a wide range of application prospects in various power supply and power control applications. .
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**Field modules and functions:**.
1. **Power module:** Used for power switching and regulation, it can achieve high-efficiency power supply through its low on-resistance and high current characteristics. .
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2. **Motor drive module:** Suitable for motor control, it can provide high-efficiency motor drive through high current handling capability and low on-resistance. .
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3. **Power amplifier module:** Can be used as the output stage driver of the power amplifier to ensure low on-resistance under high current conditions and provide high-quality audio output. .
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**Precautions for use:**.
- Strictly follow the maximum rated voltage and current to prevent overload damage to the device. .
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- Ensure proper heat dissipation design to keep the device within the normal operating temperature range. .
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- Pay attention to the threshold voltage and ensure that the correct gate voltage is considered in the design. .
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- Avoid electrostatic discharge during use and take appropriate protective measures. .
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- Take appropriate overvoltage and overcurrent protection measures according to application needs to improve system reliability.

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