Model: 2SJ668.
Screen printing: VBE2610N.
Brand: VBsemi.
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Detailed parameter description: .
- Type: P-channel MOSFET.
- Maximum withstand voltage: - 60V.
- Maximum current: -38A.
- On-resistance: 61mΩ @10V, 72mΩ @4.5V.
- Gate-source voltage: 20Vgs (±V).
- Gate threshold voltage : -1.3Vth.
- Package: TO252.
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Application Introduction: .
2SJ668 is a P-channel MOSFET suitable for high-power applications with negative voltage control or load switching. Its maximum withstand voltage is -60V, its maximum current is -38A, and it has low on-resistance and high performance. .
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This device is suitable for module design in many fields, mainly including: .
1. Power management module: suitable for high-power DC-DC converters and inverters that require negative voltage control wait. .
2. High-power load switch: Can be used for high-power load switches and power controllers. .
3. Automotive electronic module: suitable for negative power supply control and load switch in automotive electronic systems. .
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In short, 2SJ668 is suitable for module design in negative voltage control and high-power load switching applications, including power management, high-power load switching and automotive electronic modules.