Model: 2SJ598-Z-E1-AZ-VB.
Silk screen: VBE2610N.
Brand: VBsemi.
Parameters:.
- P channel.
- Maximum withstand voltage: -60V .
- Maximum leakage current: -38A.
- Static on-resistance (RDS(ON)): 61mΩ @ 10V, 72mΩ @ 4.5V, 20Vgs (±V).
- Threshold voltage (Vth ): -1.3V.
- Package: TO252.
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Application introduction: .
This 2SJ598-Z-E1-AZ-VB is a P-channel field effect transistor, suitable for Various electronic applications. Its low on-resistance and withstand voltage characteristics make it ideal for use in power control and switching circuits. The device excels in applications responsible for power management and power amplification. .
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Field module application: .
1. Power management module: 2SJ598-Z-E1-AZ-VB can be used in power management modules such as switching power supplies and voltage regulators to provide efficient power control . .
2. Power amplification module: It can also be used to amplify signal modules, such as audio amplifiers, to enhance the amplification effect of audio signals. .
3. Switching circuit: Due to its P-channel characteristics, it is suitable for various switching circuits, such as switch mode power supplies and electronic switches. .
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These features and applications make 2SJ598-Z-E1-AZ-VB widely used in the electronics industry.