Model: 2SJ356-VB.
Silkscreen: VBI2658.
Brand: VBsemi.
Parameters:.
- Channel type: P-channel.
- Rated voltage: -60V.
- Maximum current: -5A.
- Static on-resistance (RDS(ON)): 58mΩ @ 10V.
- Static on-resistance (RDS(ON)): 70mΩ @ 4.5V.
- Gate-source voltage (Vgs): ±20V.
- Threshold voltage (Vth): 1V to 3V.
- Package: SOT89-3.
.
Application introduction:.
2SJ356-VB is a P-channel field effect transistor (FET) suitable for a variety of electronic devices and applications, with the following main applications:.
.
1. **Low Power Switch:** 2SJ356-VB is suitable for low power switch applications, such as low power switch and power switching in power management modules. .
.
2. **Power Distribution:** It can be used in power distribution units to help control the current flow in the circuit to achieve effective power management. .
.
3. **Battery Protection:** In battery protection circuits, 2SJ356-VB can be used for battery charging and discharging control to ensure safe operation of the battery. .
.
4. **Signal Switch:** It can be used in signal switch applications, such as analog signal switching and input switch of signal amplifiers. .
.
5. **Low Power Electronic Devices:** Due to its low static on-resistance and low power consumption, it is suitable for low power electronic devices that need to save energy. .
.
The characteristics of 2SJ356-VB make it an ideal component for low power switching and power management. It performs well in low current and low power applications and can be used in a variety of portable and low power devices, such as mobile phones, tablets, sensors, and portable electronic devices.