Model: 2SJ210-T1B-A-VB.
Silk screen: VB264K.
Brand: VBsemi.
Parameters: .
- Package type: SOT23.
- Channel type: P—Channel .
- Maximum drain voltage (Vds): -60V.
- Maximum drain current (Id): -0.5A.
- Static drain-source resistance (RDS(ON)): 3000mΩ @ VGS=10V, VGS=20V.
- Threshold voltage (Vth): -1.87V.
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Package: SOT23.
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Application introduction: .
2SJ210- T1B-A-VB is a P-Channel MOSFET suitable for a variety of circuit and module designs, especially in low-power and some specific applications that require P-Channel MOSFET. .
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Field module application: .
1. **Low power module:** Due to its lower drain current and higher drain-source resistance, it is suitable for low power applications Consumable module design, such as portable electronic devices, sensor nodes, etc. .
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2. **Power switch module:** It is suitable for power switch circuit design and can provide reliable power switching and power control functions. .
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3. **Amplifier output stage:** In the amplifier output stage circuit, 2SJ210-T1B-A-VB can be used to realize the amplification and driving functions of high-performance P-Channel MOSFET. .
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4. **Current source module:** Due to its low leakage current characteristics, it can be used in current source circuit design, such as current source, current amplifier, etc. .
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5. **Analog switch circuit:** Suitable for some circuit designs that require analog switch functions, such as analog switches, analog switching power supplies, etc. .
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Please note that the above are some typical application scenarios. Actual use requires selection and design based on specific circuit and system requirements. When integrating the 2SJ210-T1B-A-VB, it is recommended to carefully read its data sheet for detailed electrical characteristics and operating information.