Model: 2N7002ET1G-VB.
Silk screen: VB162K.
Brand: VBsemi.
Parameters:.
- Channel type: N-channel.
- Maximum withstand voltage: 60V.
- Maximum continuous current: 0.3A.
- On-resistance (RDS(ON)): 2800mΩ @ 10Vgs, 3000mΩ @ 4.5Vgs.
- Threshold voltage (Vth): 1.6V.
- Package type: SOT23.
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Application Introduction:.
2N7002ET1G-VB is a low power N-channel MOSFET (metal oxide semiconductor field effect transistor) suitable for low power electronic applications. Here are some of its main application areas: .
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1. Signal switch: This MOSFET can be used in signal switch circuits, such as in communication equipment, audio amplifiers and control circuits, to control and manage signal paths. .
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2. Power switch: In low-power power management modules, 2N7002ET1G-VB can be used for power switches to control the on and off states of the circuit to provide power management functions. .
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3. Circuit protection: It can also be used for circuit protection, such as in overcurrent protection and overtemperature protection circuits to ensure the safety and stability of the circuit. .
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4. Logic level conversion: Due to its low threshold voltage, this MOSFET can be used for logic level conversion to convert signals of different levels to compatible levels, such as in microcontrollers and digital circuits. .
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In short, 2N7002ET1G-VB is an N-channel MOSFET suitable for low-power electronic applications, especially suitable for signal switching, power switching, circuit protection and logic level conversion. Its low current and low voltage characteristics make it a common component in small electronic devices. .