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1N60-TO251-VB, a N-channel TO251 MOSFET datasheet parameters video explanation
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**1N60-TO251-VB**.
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**Silk screen:** VBFB165R02 .
**Brand:** VBsemi .
**Parameter:** TO251;N—Channel Channel, 650V; 2A; RDS(ON)=4300mΩ@VGS=10V, VGS=20V; Vth=2V .
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**Package:** TO251 .
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** Detailed parameter description: ** .
- **Channel type: ** N—Channel .
- **Maximum withstand voltage: ** 650V .
- **Maximum current: ** 2A.
- **On-resistance:** 4300mΩ (at VGS=10V), 4300mΩ (at VGS=20V) .
- **Threshold voltage:** 2V .
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**Application Introduction:** .
This device is suitable for modules that require N-channel power switching and amplification, providing reliable switching function and signal amplification. Main application areas include but are not limited to power switches, amplifier circuits and power inverters. .
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**Function:** .
- Provide reliable N-channel power switching function. .
- Used for signal amplification and conditioning. .
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**Application field module:**.
1. **Power switch module:** Used to build high-voltage, efficient power switch to stabilize the output voltage. .
2. **Amplifier circuit module:** Suitable for circuits requiring N-channel power amplification, such as audio amplifiers. .
3. **Power inverter module:** In the inverter circuit, it is used to control the high-voltage switch to achieve conversion from DC to AC. .
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**Usage Precautions:**.
1. **Voltage and current limits:** Do not exceed the specified maximum voltage and current. .
2. **Note on polarity:** Pay attention to the positive voltage characteristics of N-channel devices. .
3. **Electrostatic protection:** Take anti-static measures during handling and installation to avoid damaging the device. .
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