This product is suitable for high pressure, high temperature and high frequency applications, with low on resistance and high tolerance characteristics. They are commonly used in power electronic modules and systems, especially in areas where high efficiency and high performance are required.
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| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single N | 1200V | -10 / +22 | 2~4 | 100A | 15 | SiC-S |
Detailed parameter description:
- VDS(V): Drain-source voltage rated 1200V.
- VGE(±V): Gate-source voltage range is -10V to +22V.
- Vthtyp(V): Typical gate threshold voltage is 2 to 4V.
- RDS(on)@VGS=18Vtyp(mΩ): When the gate-source voltage is 18V, the typical on-resistance is 15mΩ.
- ID (A): Rated drain current of 100A.
- Technology: Using SiC-S technology.
illustrate:
1. EV Charging pile module: Because VBP112MC100-4L has high voltage and high current bearing capacity, it can be used as a power switch in the ev charging pile to ensure the high efficiency and stability of the charging process.
2. Solar inverter module: in the process of converting direct current to alternating current, an efficient inverter is needed to ensure the efficiency of energy conversion. The low on-on resistance and high power characteristics of VBP112MC100-4L make it ideal for solar inverter modules, helping to maximize the energy extraction of solar panels.
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