Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO247-4L |
Single N |
1200V |
-10 / +22 |
2~4 |
100A |
21 |
|
Detailed parameter description:
- VDS(V): Drain-source voltage rated 1200V.
- VGE(±V): Gate-source voltage range is -10V to +22V.
- Vthtyp(V): Typical gate threshold voltage is 2 to 4V.
- RDS(on)@VGS=18Vtyp(mΩ): When the gate-source voltage is 18V, the typical on-resistance is 21mΩ.
- ID (A): Rated drain current of 100A.
- Technology: Using SiC-S technology.
Domain and module applications：
illustrate:
1. EV Charging pile module: Because VBP112MC100-4L has high voltage and high current bearing capacity, it can be used as a power switch in the ev charging pile to ensure the high efficiency and stability of the charging process.
2. Solar inverter module: in the process of converting direct current to alternating current, an efficient inverter is needed to ensure the efficiency of energy conversion. The low on-on resistance and high power characteristics of VBP112MC100-4L make it ideal for solar inverter modules, helping to maximize the energy extraction of solar panels.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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