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VBW1101N Product details

Product introduction:

VBW1101N is a single N-type field effect transistor (FET) launched by VBsemi, which adopts Trench technology and has high performance and reliability. It is suitable for various high-power power management and power control applications, providing reliable power conversion and stability Current driving capabilities. Such as industrial power supplies, motor drives, high-performance power modules, etc.

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Product parameter:

**parameter:**
- **Type:** Single N type
- **Maximum Drain-Source Voltage (VDS):** 100V
- **Maximum Gate-Source Voltage (VGS):** ㊣20V
- **Threshold Voltage (Vth):** 2.5V
- **On-resistance (m次) at VGS=4.5V:** 10m次
- **On-resistance (m次) at VGS=10V:** 9m次
- **Maximum drain current (ID):** 100A
- **Technology:** Trench
- **Package:** TO3P

Domain and module applications:

**Examples of application areas:**
1. **Power inverter:** VBW1101N can be used to manufacture high-power power inverter to convert DC power into AC power, suitable for industrial power supply, UPS (uninterruptible power supply) and other applications.
2. **Industrial motor drive:** In industrial motor drive systems, this transistor can be used in high-power motor drivers to achieve high-efficiency and stable motor control.
3. **High-performance power module:** In the high-performance power module, VBW1101N can be used as a switching tube to achieve high-frequency power conversion and stable output.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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