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VBQF1252M Product details

Product introduction:

The VBQF1252M is a single N-channel MOSFET with a rated drain-source voltage of up to 250V and a drain current of 10.3A. Features include a standard gate-source voltage of ±20V, a threshold voltage of 3.5V, and a drain-source resistance of 125 milliohms. The device uses Trench technology and is packaged as DFN8 (3X3).

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Product parameter:

parameter:
- Type: Single N-channel MOSFET
- Rated drain-source voltage (VDS): 250V
- Standard gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (miohms) at gate-source voltage 10V: 125
- Drain current (ID): 10.3A
- Technology: Trench
Package: DFN8(3X3)

Domain and module applications:

for example:
1. Power management module: Since the VBQF1252M has a high rated voltage and moderate drain current, it is suitable for various power management modules such as battery chargers and DC regulators. In the battery charger, it can be used as a power switching device in the charging circuit to achieve battery charging and current protection functions."
2. LED Driver: This MOSFET can be used in LED driver modules in LED lighting systems to achieve brightness adjustment and current control of LED lamps. Its moderate rated voltage and drain current make it a common power switching device in LED drivers.
3. Industrial control system: In industrial control systems, VBQF1252M can be used as a key component of industrial motor control modules, such as frequency converters and motor drivers. Its high rated voltage and stable performance ensure reliable operation and long-term stability of industrial control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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