Product parameter：
**Parameter Description:**
- Product model: VBQF1208N
- Brand: VBsemi
- Type: Single N-channel field effect transistor (Single N)
- Rated drain-source voltage (VDS): 200V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance at gate-source voltage 10V: 85m次
- Drain current (ID): 9.3A
- Technology: Trench
-Package: DFN8(3X3)
Domain and module applications：
**Example application scenarios and modules:**
1. **Power module:**
In power modules, VBQF1208N can be used as a high-voltage switch to control power switching and power regulation. For example, in industrial equipment, it can be used for power switch control and motor drives.
2. **LED lighting module:**
In the LED lighting module, VBQF1208N can be used as a switch for the LED driver to control the brightness and switching status of the LED. This is particularly useful in indoor and outdoor lighting systems.
3. **Electric Vehicle Module:**
In electric vehicle modules, VBQF1208N can be used as power switches and drivers for electric vehicles. It can control the battery charging and discharging process of electric vehicles, as well as the start, stop and speed control of the electric motor.
4. **Industrial Automation Module:**
In industrial automation modules, VBQF1208N can be used for power switches and power regulators in various industrial control systems. For example, in automated production lines, it can control the actions of various electric actuators and drives.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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