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VBQE165R20S Product details

Product introduction:

Product introduction:

VBsemi's VBQE165R20S is a single N-type MOSFET with a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS, positive and negative) of 30V, and a threshold voltage (Vth) of 3.5V. It uses SJ_Multi-EPI technology and is packaged as DFN8X8.

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Product parameter:

Detailed parameter description:

- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS, positive and negative): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 160
- Maximum drain current (ID): 20A

Domain and module applications:

Examples of applicable fields and modules:

- Power converters: Due to its high voltage tolerance and low on-resistance, it is suitable for power conversion and current control in power converters, such as server power supplies and industrial power supplies.
- Automotive electronic systems: Can be used for power management and drive control in automotive electronic systems, such as motor drivers and on-board chargers for electric vehicles.
- Solar inverter: In a solar inverter, it can be used as a switching tube to achieve power conversion and current control between solar panels and the grid.
- Industrial automation equipment: Suitable for power management and power control in industrial automation equipment, such as PLC, servo drives, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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