Product introduction:
VBE5638 is a Common Drain N+P type field effect transistor produced by VBsemi and is suitable for a variety of electronic applications. Features a dual-channel design that provides flexible power control in the circuit.

Detailed parameter description:
- VDS(V): Maximum drain-source voltage is ±60V.
- VGS(±V): Gate-source voltage range is ±20V.
- Vth(V): The turn-on voltage is 1.8V (N channel) and -1.7V (P channel).
- VGS=4.5V(mΩ): When the gate-source voltage is 4.5V, the drain-source resistance is 33 mΩ (N channel) and 60 mΩ (P channel) respectively.
- VGS=10V(mΩ): When the gate-source voltage is 10V, the drain-source resistance is 30 mΩ (N channel) and 50 mΩ (P channel) respectively.
- ID (A): Maximum drain current is 35A (N channel) and -19A (P channel).
- Technology: Using Trench technology.