Product parameter：
**Parameter Description:**
- Product model: VBE1203M
- Brand: VBsemi
- Type: Single N-channel field effect transistor (Single N)
- Rated drain-source voltage (VDS): 200V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance at gate-source voltage 10V: 245m次
- Drain current (ID): 10A
- Technology: Trench
-Package:TO252
Domain and module applications：
**Example application scenarios and modules:**
1. **Power module:**
In power modules, VBE1203M can be used as the main power switch of the switching power supply to control the output voltage and current of the power supply. For example, in a power inverter, it can be used to control the switching frequency and output power of the inverter.
2. **Power tool module:**
In the power tool module, VBE1203M can be used as the power switch and driver of the power tool. It can control the start and stop and speed of the motor of the power tool, as well as the power output of the tool.
3. **Electric Vehicle Module:**
In the electric vehicle module, VBE1203M can be used as the power switch and controller of the electric vehicle. It can control the battery charging and discharging process of the electric vehicle, as well as the start and stop and speed control of the motor.
4. **Industrial Automation Module:**
In industrial automation modules, VBE1203M can be used as power switches and drivers in various industrial control systems. For example, in automated production lines, it can control the actions of various electric actuators and drives.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
