【VBSEMI】MOS is a sophisticated electronic components to design a structure, semiconductor field effect transistors effectively. MOS pipe is mainly divided into two kinds of channel N and P, the source of the P Channel MOS pipe is not connected, when the source of the P channel to provide sufficient positive voltage, the N type P surface will produce a type of reverse layer, so as to form a connection between the drain and the source of the channel, resulting in stable operation effect.
Gate gate with the increase of pressure change, will affect the aggregation in the channel of the electron density, which channel has the resistance will change, according to the working principle of the MOS tube, known for P-Channel Enhancement mode field effect transistor. In the case of the N type silicon surface without applying the gate voltage, the P type reaction layer has appeared. So long as the bias voltage can be applied to change the resistance of the channel, the P Channel MOS tube is called P channel depletion type MOS pipe. Also in the p-channel MOS tube in hole mobility is very low, so in MOS tube size and voltage on the equivalent, p-channel MOS tube will form small in n-channel MOS tube of the transconductance and MOS transistor threshold voltage absolute value than other transistors higher. Therefore, the requirements of the higher voltage. In power supply, voltage magnitude and source electrode, a drain electrode polarity will produce incompatibility with bipolar transistors, so in the MOS tube working process, p-channel MOS transistor charge and discharge time is relatively long and transconductance leads to lower working speed, and n-channel MOS tube circuit work rate is higher and more steady, logic swing amplitude is smaller. |